PART |
Description |
Maker |
IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDY10S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDH12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH02SG120 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDB06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDC08S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDC04S60C |
2nd generation thinQ SiC Schottky Diode 2nd generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|